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Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT16G4DFS8266.C8FB 16GB

Micron Technology 16JSF25664HZ-1G1F1 2GB vs Crucial Technology CT16G4DFS8266.C8FB 16GB

总分
star star star star star
Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分
star star star star star
Crucial Technology CT16G4DFS8266.C8FB 16GB

Crucial Technology CT16G4DFS8266.C8FB 16GB

差异 规格 评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB 需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB
报告一个错误
Crucial Technology CT16G4DFS8266.C8FB 16GB 需要考虑的原因
Crucial Technology CT16G4DFS8266.C8FB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 29
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 10.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 8500
    左右 2.51 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 28
  • 读取速度，GB/s
    10.5 left arrow 16.1
  • 写入速度，GB/s
    7.1 left arrow 12.6
  • 内存带宽，mbps
    8500 left arrow 21300
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1425 left arrow 3344

Micron Technology 16JSF25664HZ-1G1F1 2GB RAM的比较

Netlist N*D1G7A2250BFD53I2 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

Crucial Technology CT16G4DFS8266.C8FB 16GB RAM的比较

PNY Electronics PNY 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Mushkin 99[2/7/4]205F 8GB
Mushkin 99[2/7/4]205F 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston KHX3333C16D4/8GX 8GB
Kingston KHX3333C16D4/8GX 8GB
内存RAM
SK Hynix HYMP512U64CP8-Y5 1GB
SK Hynix HYMP512U64CP8-Y5 1GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Apacer Technology 78.DAGRL.4050C 16GB
Apacer Technology 78.DAGRL.4050C 16GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingston RB24D4U7S8MB-8 8GB
Kingston RB24D4U7S8MB-8 8GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F4-3600C18-32GTZN 32GB
G Skill Intl F4-3600C18-32GTZN 32GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
G Skill Intl F4-2933C16-16GFX 16GB
G Skill Intl F4-2933C16-16GFX 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3000C15-8GTZ 8GB
G Skill Intl F4-3000C15-8GTZ 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
内存RAM