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Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-2800C16-8GRK 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB vs G Skill Intl F4-2800C16-8GRK 8GB

总分
star star star star star
Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分
star star star star star
G Skill Intl F4-2800C16-8GRK 8GB

G Skill Intl F4-2800C16-8GRK 8GB

差异 规格 评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB 需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 39
    左右 26% 更低的延时
G Skill Intl F4-2800C16-8GRK 8GB 需要考虑的原因
G Skill Intl F4-2800C16-8GRK 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14 left arrow 10.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.5 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-2800C16-8GRK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 39
  • 读取速度，GB/s
    10.5 left arrow 14.0
  • 写入速度，GB/s
    7.1 left arrow 10.5
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1425 left arrow 2834

Micron Technology 16JSF25664HZ-1G1F1 2GB RAM的比较

Netlist N*D1G7A2250BFD53I2 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

G Skill Intl F4-2800C16-8GRK 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
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Samsung M471B5674QH0-YK0 2GB
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Kingston HP32D4U8S8ME-8XR 8GB
内存RAM
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Kingston KF552C40-16 16GB
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内存RAM
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Samsung M386A8K40BM1-CRC 64GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
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