Micron Technology 16JTF51264HZ-1G6M1 4GB vs Apacer Technology 78.B1GQB.4010B 4GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Apacer Technology 78.B1GQB.4010B 4GB

Apacer Technology 78.B1GQB.4010B 4GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 71

左右 61% 更低的延时
更快的写入速度，GB/s

9.0 5.2

测试中的平均数值

Apacer Technology 78.B1GQB.4010B 4GB

需要考虑的原因
Apacer Technology 78.B1GQB.4010B 4GB

报告一个错误

更快的读取速度，GB/s

13.5 12.9

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Apacer Technology 78.B1GQB.4010B 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 71
读取速度，GB/s

12.9 13.5
写入速度，GB/s

9.0 5.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2112 1344

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX2400C12D4/8GX 8GB

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Apacer Technology 78.01G86.9H50C 1GB

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Corsair CMD16GX4M2B3866C18 8GB

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G Skill Intl F5-5600J4040C16G 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Smart Modular SMS4TDC8C1K0446FCG 8GB

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SK Hynix HMT351R7EFR8C-RD 4GB

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SK Hynix HMA851S6AFR6N-UH 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

G Skill Intl F4-3200C22-16GRS 16GB

G Skill Intl F4-3200C22-16GRS 16GB

Corsair CMY16GX3M4A2133C8 4GB

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Smart Modular SF464128CKHIWDFSEG 4GB

Smart Modular SF464128CKHIWDFSEG 4GB

Kingston 99P5471-002.A00LF 2GB

Kingston 99P5471-002.A00LF 2GB

Ramaxel Technology RMUA5120MB86H9F2400 4GB

Ramaxel Technology RMUA5120MB86H9F2400 4GB