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Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology C 8GB
比较
Micron Technology 16JTF51264HZ-1G6M1 4GB vs Crucial Technology C 8GB
总分
Micron Technology 16JTF51264HZ-1G6M1 4GB
总分
Crucial Technology C 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
低于PassMark测试中的延时,ns
28
31
左右 10% 更低的延时
更快的写入速度,GB/s
9.0
6.5
测试中的平均数值
需要考虑的原因
Crucial Technology C 8GB
报告一个错误
更快的读取速度,GB/s
13.2
12.9
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology C 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
31
读取速度,GB/s
12.9
13.2
写入速度,GB/s
9.0
6.5
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2112
1983
Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB
Crucial Technology C 8GB RAM的比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1K70QB0-CK0 8GB
Corsair CMR16GX4M2D3000C16 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHX2400C15D4/16GX 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology C 8GB
Kingston 9905403-038.A00LF 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Transcend Information AQD-D4U4GN21-SG 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston XJ69DF-MIE2 8GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3200C15-8GTZKO 8GB
Kingston HP26D4S9S8ME-8 8GB
Corsair CMSX32GX4M2A2666C18 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3600C17-16GTZR 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Panram International Corporation PUD43000C158G2NJK 8GB
Qimonda 72T128420EFA3SB2 1GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
Samsung M3 78T5663RZ3-CE6 2GB
Mushkin MR[ABC]4U360JNNM16G 16GB
报告一个错误
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Bug description
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