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Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3600C18-8GTZR 8GB
比较
Micron Technology 16JTF51264HZ-1G6M1 4GB vs G Skill Intl F4-3600C18-8GTZR 8GB
总分
Micron Technology 16JTF51264HZ-1G6M1 4GB
总分
G Skill Intl F4-3600C18-8GTZR 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
低于PassMark测试中的延时,ns
28
29
左右 3% 更低的延时
需要考虑的原因
G Skill Intl F4-3600C18-8GTZR 8GB
报告一个错误
更快的读取速度,GB/s
19.3
12.9
测试中的平均数值
更快的写入速度,GB/s
16.0
9.0
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3600C18-8GTZR 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
29
读取速度,GB/s
12.9
19.3
写入速度,GB/s
9.0
16.0
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2112
3687
Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB
G Skill Intl F4-3600C18-8GTZR 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3600C18-8GTZR 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Kingston MSI24D4U7D8MH-16 16GB
Samsung M3 93T5750CZA-CE6 2GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Corsair CMW16GX4M2D3600C18 8GB
Samsung M393A1G40DB0-CPB 8GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
Kingston 99U5471-052.A00LF 8GB
Mushkin 99[2/7/4]192F 4GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston 9932291-002.A00G 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BL16G32C16S4B.8FB 16GB
A-DATA Technology DQKD1A08 1GB
Gloway International (HK) STKD4XMP2400-F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Chun Well Technology Holding Limited D4U0836181B 8GB
报告一个错误
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Bug description
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