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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
低于PassMark测试中的延时,ns
51
122
左右 58% 更低的延时
更快的读取速度,GB/s
15.6
9.4
测试中的平均数值
更快的写入速度,GB/s
11.8
5.8
测试中的平均数值
更高的内存带宽,mbps
25600
19200
左右 1.33% 更高的带宽
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
报告一个错误
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
122
读取速度,GB/s
15.6
9.4
写入速度,GB/s
11.8
5.8
内存带宽,mbps
25600
19200
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2687
1411
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB RAM的比较
A-DATA Technology AD73I1C1674EV 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
Asgard VMA45UG-MEC1U2AW1 8GB
Corsair CMK64GX4M8A2133C13 8GB
Kingston 99U5458-008.A00LF 4GB
G Skill Intl F4-3600C17-8GVK 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AO1P32NC8W1-BD2SHC 8GB
Samsung M471A5244CB0-CWE 4GB
Corsair CMT32GX4M4C3200C16 8GB
Kingston 99U5474-038.A00LF 4GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
Kingston ACR16D3LS1KNG/4G 4GB
G Skill Intl F4-3200C16-16GVK 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
Samsung M378B5673EH1-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-3200C16-8GTZR 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMD16GX4M2A2400C14 8GB
SK Hynix DDR2 800 2G 2GB
SK Hynix HMA81GS6MFR8N-UH 8GB
报告一个错误
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