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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M471A2K43DB1-CTD 16GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Samsung M471A2K43DB1-CTD 16GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Samsung M471A2K43DB1-CTD 16GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更快的读取速度,GB/s
15.6
15.2
测试中的平均数值
更快的写入速度,GB/s
11.8
10.7
测试中的平均数值
更高的内存带宽,mbps
25600
21300
左右 1.2% 更高的带宽
需要考虑的原因
Samsung M471A2K43DB1-CTD 16GB
报告一个错误
低于PassMark测试中的延时,ns
35
51
左右 -46% 更低的延时
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M471A2K43DB1-CTD 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
35
读取速度,GB/s
15.6
15.2
写入速度,GB/s
11.8
10.7
内存带宽,mbps
25600
21300
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2687
2773
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M471A2K43DB1-CTD 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905702-120.A00G 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M471A2K43DB1-CTD 16GB
Kingston KF552C40-16 16GB
Kingston ACR32D4S2S8ME-16 16GB
Samsung M471B5674QH0-YK0 2GB
Golden Empire CL16-16-16 D4-2400 8GB
Kingston KHX1600C9D3/4G 4GB
Apacer Technology 78.C1GMM.DFW0C 8GB
Kingston 9965525-140.A00LF 8GB
Kingston 9905678-110.A00G 8GB
Samsung M3 78T5663RZ3-CE6 2GB
SK Hynix HMA451U7AFR8N-TF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA451S6AFR8N-TF 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M393A1G43DB0-CPB 8GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-2666C15-8GVR 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
SK Hynix HMA451S6AFR8N-TF 4GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-3600C18-16GVK 16GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
Kingston 9905403-444.A00LF 4GB
Corsair CMW128GX4M8X3600C18 16GB
报告一个错误
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Bug description
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