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Micron Technology 8ATF2G64HZ-3G2E2 16GB
V-Color Technology Inc. TL48G30S8KGRGB15 8GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs V-Color Technology Inc. TL48G30S8KGRGB15 8GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
V-Color Technology Inc. TL48G30S8KGRGB15 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更快的写入速度,GB/s
11.8
10.2
测试中的平均数值
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
V-Color Technology Inc. TL48G30S8KGRGB15 8GB
报告一个错误
低于PassMark测试中的延时,ns
46
51
左右 -11% 更低的延时
更快的读取速度,GB/s
16.4
15.6
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
V-Color Technology Inc. TL48G30S8KGRGB15 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
46
读取速度,GB/s
15.6
16.4
写入速度,GB/s
11.8
10.2
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2687
2453
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
V-Color Technology Inc. TL48G30S8KGRGB15 8GB RAM的比较
Samsung M378B5673EH1-CF8 2GB
A-DATA Technology DQVE1908 512MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology BLS4G4D240FSA.8FAD 4GB
A-DATA Technology DQVE1908 512MB
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Samsung M378B5673EH1-CF8 2GB
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Team Group Inc. TEAMGROUP-SD4-2400 16GB
Corsair CMV16GX4M1A2133C15 16GB
Crucial Technology 8G4US2400.M8B1 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
报告一个错误
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Bug description
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