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Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-3466C18-8GTZRXB 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB vs G Skill Intl F4-3466C18-8GTZRXB 8GB

总分
star star star star star
Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

总分
star star star star star
G Skill Intl F4-3466C18-8GTZRXB 8GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

差异 规格 评论

差异

Micron Technology 8JSF25664HZ-1G4D1 2GB 需要考虑的原因
Micron Technology 8JSF25664HZ-1G4D1 2GB
报告一个错误
G Skill Intl F4-3466C18-8GTZRXB 8GB 需要考虑的原因
G Skill Intl F4-3466C18-8GTZRXB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 41
    左右 -141% 更低的延时
  • 更快的读取速度，GB/s
    20.9 left arrow 10.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.0 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 17
  • 读取速度，GB/s
    10.7 left arrow 20.9
  • 写入速度，GB/s
    7.5 left arrow 16.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1335 left arrow 3550

Micron Technology 8JSF25664HZ-1G4D1 2GB RAM的比较

Patriot Memory (PDP Systems) PSD34G160081S 4GB
SK Hynix HMA82GS7AFR8N-UH 16GB

G Skill Intl F4-3466C18-8GTZRXB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
Crucial Technology CT4G4DFS8266.M8FF 4GB
Crucial Technology CT4G4DFS8266.M8FF 4GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-2400C15-16GTZRX 16GB
G Skill Intl F4-2400C15-16GTZRX 16GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology CT16G4DFD8266.C16FN 16GB
Crucial Technology CT16G4DFD8266.C16FN 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMW64GX4M2D3600C18 32GB
Corsair CMW64GX4M2D3600C18 32GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston KHX2133C13D4/8GX 8GB
Kingston KHX2133C13D4/8GX 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kllisre M378A5143EB2-CRC 4GB
Kllisre M378A5143EB2-CRC 4GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Crucial Technology CT8G4DFD824A.M16FF 8GB
Crucial Technology CT8G4DFD824A.M16FF 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMK16GX4M2B3200C16 8GB
Corsair CMK16GX4M2B3200C16 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-2666C15-16GVR 16GB
G Skill Intl F4-2666C15-16GVR 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMU16GX4M2D3000C16 8GB
Corsair CMU16GX4M2D3000C16 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Corsair MK16GX44A2666C16 4GB
Corsair MK16GX44A2666C16 4GB
内存RAM