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Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-4000C18-8GTZSW 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB vs G Skill Intl F4-4000C18-8GTZSW 8GB

总分
star star star star star
Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

总分
star star star star star
G Skill Intl F4-4000C18-8GTZSW 8GB

G Skill Intl F4-4000C18-8GTZSW 8GB

差异 规格 评论

差异

Micron Technology 8JSF25664HZ-1G4D1 2GB 需要考虑的原因
Micron Technology 8JSF25664HZ-1G4D1 2GB
报告一个错误
G Skill Intl F4-4000C18-8GTZSW 8GB 需要考虑的原因
G Skill Intl F4-4000C18-8GTZSW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 41
    左右 -37% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 10.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.0 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-4000C18-8GTZSW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 30
  • 读取速度，GB/s
    10.7 left arrow 17.2
  • 写入速度，GB/s
    7.5 left arrow 17.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1335 left arrow 3773

Micron Technology 8JSF25664HZ-1G4D1 2GB RAM的比较

Patriot Memory (PDP Systems) PSD34G160081S 4GB
SK Hynix HMA82GS7AFR8N-UH 16GB

G Skill Intl F4-4000C18-8GTZSW 8GB RAM的比较

SK Hynix HMA851S6CJR6N-XN 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Kingmax Semiconductor GLAF62F-D8---------- 4GB
Kingmax Semiconductor GLAF62F-D8---------- 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-4000C18-8GTZSW 8GB
G Skill Intl F4-4000C18-8GTZSW 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Transcend Information JM3200HLE-16G 16GB
Transcend Information JM3200HLE-16G 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
内存RAM
SK Hynix HMAA2GS6AJR8N-XN 16GB
SK Hynix HMAA2GS6AJR8N-XN 16GB
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
内存RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Samsung M393A1G40DB0-B`B 8GB
Samsung M393A1G40DB0-B`B 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
PUSKILL PJ16TFK1GM8 16GB
PUSKILL PJ16TFK1GM8 16GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5402-492.A00LF 4GB
Kingston 99U5402-492.A00LF 4GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Kingston 99U5701-003.A00G 16GB
Kingston 99U5701-003.A00G 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMK64GX4M4A2133C13 16GB
Corsair CMK64GX4M4A2133C13 16GB
内存RAM