RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Corsair CMH128GX4M4E3200C16 32GB
比较
Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs Corsair CMH128GX4M4E3200C16 32GB
总分
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
总分
Corsair CMH128GX4M4E3200C16 32GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
27
左右 4% 更低的延时
需要考虑的原因
Corsair CMH128GX4M4E3200C16 32GB
报告一个错误
更快的读取速度,GB/s
16.3
12.3
测试中的平均数值
更快的写入速度,GB/s
13.9
7.1
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Corsair CMH128GX4M4E3200C16 32GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
27
读取速度,GB/s
12.3
16.3
写入速度,GB/s
7.1
13.9
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1952
3583
Nanya Technology M2F4GH64CB8HB6N-CG 4GB RAM的比较
SK Hynix HMT125U6DFR8C-H9 2GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Corsair CMH128GX4M4E3200C16 32GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 99U5625-015.A00G 16GB
PNY Electronics PNY 2GB
Corsair CMK8GX4M2A2666C16 4GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3333C16-8GTZKW 8GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
Kingston DDR3 1333G 2GB
Golden Empire CL16-18-18 D4-3200 8GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Corsair CMH128GX4M4E3200C16 32GB
A-DATA Technology DDR3 1600 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3200C16-4GRK 4GB
Team Group Inc. ZEUS-2133 8GB
G Skill Intl F4-4000C16-16GTRS 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston XRGM6C-MIB 16GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-2933C14-8GTZRX 8GB
Samsung M393B5270CH0-CH9 4GB
Corsair CMR16GX4M2C3200C16 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Kingston KHX2666C16/8G 8GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BL16G30C15U4WL.M16FE 16GB
报告一个错误
×
Bug description
Source link