RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
比较
Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
总分
Nanya Technology M2F8G64CB8HC9N-DI 8GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
报告一个错误
低于PassMark测试中的延时,ns
22
37
左右 -68% 更低的延时
更快的读取速度,GB/s
17.7
13.9
测试中的平均数值
更快的写入速度,GB/s
12.7
8.6
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
37
22
读取速度,GB/s
13.9
17.7
写入速度,GB/s
8.6
12.7
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2395
3075
Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较
SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM的比较
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
SK Hynix HYMP512U64CP8-Y5 1GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMU32GX4M2A2666C16 16GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology CT16G4DFD8213.C16FBR 16GB
A-DATA Technology AD5U48008G-B 8GB
G Skill Intl F4-3200C15-16GVK 16GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2666C19-8GRS 8GB
Kingston KF552C40-16 16GB
Crucial Technology CT32G4SFD8266.C16FE 32GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMV8GX4M1A2133C15 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT8G4DFS832A.C8FJ 8GB
Samsung M391B5673FH0-CH9 2GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Hewlett-Packard 7TE39AA#ABC 8GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3600C17-16GTZR 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston KKRVFX-MIE 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Shenzhen Xingmem Technology Corp 16GB
报告一个错误
×
Bug description
Source link