Nanya Technology M2N1G64TUH8D5F-AC 1GB vs A-DATA Technology AO2P32NCSV1-BEVS 16GB

总分

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分

A-DATA Technology AO2P32NCSV1-BEVS 16GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

差异规格评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB

需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB

报告一个错误

更快的读取速度，GB/s

2 17.5

测试中的平均数值

A-DATA Technology AO2P32NCSV1-BEVS 16GB

需要考虑的原因
A-DATA Technology AO2P32NCSV1-BEVS 16GB

报告一个错误

低于PassMark测试中的延时，ns

39 92

左右 -136% 更低的延时
更快的写入速度，GB/s

9.1 1,266.1

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2N1G64TUH8D5F-AC 1GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

92 39
读取速度，GB/s

2,105.4 17.5
写入速度，GB/s

1,266.1 9.1
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

339 2852

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5673FH0-CH9 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Avant Technology J641GU42J9266ND 8GB

Avant Technology J641GU42J9266ND 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology CT8G4DFS824A.M8FD 8GB

Crucial Technology CT8G4DFS824A.M8FD 8GB

Crucial Technology CT102464BF160B.16F 8GB

Crucial Technology CT102464BF160B.16F 8GB

Corsair CMK16GX4M2D2666C16 8GB

Corsair CMK16GX4M2D2666C16 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston KHX3200C16D4/32GX 32GB

Kingston KHX3200C16D4/32GX 32GB