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Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3600C17-8GTZSW 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs G Skill Intl F4-3600C17-8GTZSW 8GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
G Skill Intl F4-3600C17-8GTZSW 8GB

G Skill Intl F4-3600C17-8GTZSW 8GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
G Skill Intl F4-3600C17-8GTZSW 8GB 需要考虑的原因
G Skill Intl F4-3600C17-8GTZSW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 92
    左右 -441% 更低的延时
  • 更快的读取速度，GB/s
    21.6 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.7 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3600C17-8GTZSW 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 17
  • 读取速度，GB/s
    2,105.4 left arrow 21.6
  • 写入速度，GB/s
    1,266.1 left arrow 17.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    339 left arrow 3702

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

G Skill Intl F4-3600C17-8GTZSW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3600C17-8GTZSW 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Ramaxel Technology RMUA5180ME78HBF-2666 16GB
Ramaxel Technology RMUA5180ME78HBF-2666 16GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Corsair CMD16GX4M4B3300C16 4GB
Corsair CMD16GX4M4B3300C16 4GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Samsung M386A8K40CM2-CRC 64GB
Samsung M386A8K40CM2-CRC 64GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Inmos + 256MB
Inmos + 256MB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
内存RAM
Samsung M378B1G73EB0-CK0 8GB
Samsung M378B1G73EB0-CK0 8GB
Smart Modular SF4721G8CKHH6DFSDS 8GB
Smart Modular SF4721G8CKHH6DFSDS 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Golden Empire CL16-16-16 D4-2800 8GB
Golden Empire CL16-16-16 D4-2800 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CM4X16GC3600C18K2D 16GB
Corsair CM4X16GC3600C18K2D 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
G Skill Intl F4-3200C14-16GTZSW 16GB
G Skill Intl F4-3200C14-16GTZSW 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Gloway International (HK) STKD4GAM2400-F 8GB
Gloway International (HK) STKD4GAM2400-F 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
内存RAM