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Nanya Technology M2X4G64CB8HG9N-DG 4GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
比较
Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
总分
Nanya Technology M2X4G64CB8HG9N-DG 4GB
总分
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
报告一个错误
低于PassMark测试中的延时,ns
21
36
左右 -71% 更低的延时
更快的读取速度,GB/s
18.5
14.9
测试中的平均数值
更快的写入速度,GB/s
14.0
9.5
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
36
21
读取速度,GB/s
14.9
18.5
写入速度,GB/s
9.5
14.0
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2292
3263
Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较
Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB RAM的比较
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905403-061.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Micron Technology 36ASF4G72PZ-2G3D1 32GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston KHX2400C15S4/16G 16GB
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Kingston KTP9W1-MIE 16GB
AMD R538G1601U2S 8GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
Samsung M393B1G70BH0-CK0 8GB
Panram International Corporation D4N2666PS-16G 16GB
TwinMOS 8DHE3MN8-HATP 2GB
A-DATA Technology AO1P32NCSV1-BDBS 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-3600C19-16GSXK 16GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT4G4DFS8213.C8FBD1 4GB
Crucial Technology CT25664AA800.M16FM 2GB
Essencore Limited KD48GU880-32N220T 8GB
A-DATA Technology DDR3L 1600G 4GB
A-DATA Technology DDR4 3600 8GB
Samsung 1600 CL10 Series 8GB
Samsung M471A2K43CB1-CRC 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
SK Hynix HMA82GS6CJR8N-V-V 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston HP28D4S7D8HA-16X 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS8G4D240FSC.16FBD2 8GB
报告一个错误
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Bug description
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