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Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-4400C17-16GTZR 16GB
比较
Nanya Technology M2X4G64CB8HG9N-DG 4GB vs G Skill Intl F4-4400C17-16GTZR 16GB
总分
Nanya Technology M2X4G64CB8HG9N-DG 4GB
总分
G Skill Intl F4-4400C17-16GTZR 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
需要考虑的原因
G Skill Intl F4-4400C17-16GTZR 16GB
报告一个错误
低于PassMark测试中的延时,ns
22
36
左右 -64% 更低的延时
更快的读取速度,GB/s
20.2
14.9
测试中的平均数值
更快的写入速度,GB/s
17.5
9.5
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-4400C17-16GTZR 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
36
22
读取速度,GB/s
14.9
20.2
写入速度,GB/s
9.5
17.5
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2292
4014
Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较
Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB
G Skill Intl F4-4400C17-16GTZR 16GB RAM的比较
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KVR533D2N4 512MB
Micron Technology 4ATF51264AZ-2G6E1 4GB
AMD R534G1601U1S-UO 4GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMR16GX4M2Z2933C16 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Ramaxel Technology RMUA5110MB78HAF-2400 8GB
Samsung M378B5273CH0-CH9 4GB
Corsair CMW32GX4M4K4000C19 8GB
Corsair CMY8GX3M2A2666C10 4GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
Samsung M471B5273DH0-CK0 4GB
Kingston CBD26D4U9S8ME-8 8GB
Corsair CMD16GX3M2A1866C9 8GB
G Skill Intl F4-2133C15-4GRR 4GB
Mushkin 991988 (996988) 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-2400C17-8GISM 8GB
Samsung M3 93T5750CZA-CE6 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Corsair CMZ16GX3M2A1866C9 8GB
Kingston 9905744-035.A00G 16GB
SK Hynix HMT325S6CFR8C-H9 2GB
DSL Memory D4SH1G081SH26A-C 8GB
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N
报告一个错误
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Bug description
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