Nanya Technology M2Y1G64TU8HB0B-25C 1GB vs Micron Technology 8ATF2G64AZ-3G2E1 16GB

总分

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

总分

Micron Technology 8ATF2G64AZ-3G2E1 16GB

Micron Technology 8ATF2G64AZ-3G2E1 16GB

差异规格评论

差异

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

需要考虑的原因
Nanya Technology M2Y1G64TU8HB0B-25C 1GB

报告一个错误

更快的读取速度，GB/s

3 16.9

测试中的平均数值
更快的写入速度，GB/s

2,077.3 10.4

测试中的平均数值

Micron Technology 8ATF2G64AZ-3G2E1 16GB

需要考虑的原因
Micron Technology 8ATF2G64AZ-3G2E1 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 61

左右 -85% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Micron Technology 8ATF2G64AZ-3G2E1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 33
读取速度，GB/s

3,835.2 16.9
写入速度，GB/s

2,077.3 10.4
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

606 3035

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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