Nanya Technology M2Y51264TU88A2B-3C 512MB vs G Skill Intl F4-4800C18-8GTRG 8GB

总分

Nanya Technology M2Y51264TU88A2B-3C 512MB

Nanya Technology M2Y51264TU88A2B-3C 512MB

总分

G Skill Intl F4-4800C18-8GTRG 8GB

G Skill Intl F4-4800C18-8GTRG 8GB

差异规格评论

差异

Nanya Technology M2Y51264TU88A2B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88A2B-3C 512MB

报告一个错误

更快的写入速度，GB/s

874.3 15.4

测试中的平均数值

G Skill Intl F4-4800C18-8GTRG 8GB

需要考虑的原因
G Skill Intl F4-4800C18-8GTRG 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 81

左右 -179% 更低的延时
更快的读取速度，GB/s

16.7 1

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88A2B-3C 512MB

G Skill Intl F4-4800C18-8GTRG 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

81 29
读取速度，GB/s

1,885.7 16.7
写入速度，GB/s

874.3 15.4
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

277 3552

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology M2Y51264TU88A2B-3C 512MB

Nanya Technology M2Y51264TU88A2B-3C 512MB

G Skill Intl F4-4800C18-8GTRG 8GB

G Skill Intl F4-4800C18-8GTRG 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

Apacer Technology GD2.111881.002 4GB

Apacer Technology GD2.111881.002 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

G Skill Intl F4-3200C14-8GTZKY 8GB

G Skill Intl F4-3200C14-8GTZKY 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G

Samsung M378A4G43MB1-CTD 32GB

Samsung M378A4G43MB1-CTD 32GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Corsair CMK32GX4M4K4333C19 8GB

Corsair CMK32GX4M4K4333C19 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3200C14-16GTZ 16GB

G Skill Intl F4-3200C14-16GTZ 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Corsair CMH32GX4M2Z3200C16 16GB

Corsair CMH32GX4M2Z3200C16 16GB

Mushkin 994083 4GB

Mushkin 994083 4GB

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F4-3200C16-16GTZKW 16GB

G Skill Intl F4-3200C16-16GTZKW 16GB