RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Nanya Technology M2Y51264TU88B0B-3C 512MB
Solarflare Communications CT16G4DFD824A.C16FBR 16GB

Nanya Technology M2Y51264TU88B0B-3C 512MB vs Solarflare Communications CT16G4DFD824A.C16FBR 16GB

总分
star star star star star
Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分
star star star star star
Solarflare Communications CT16G4DFD824A.C16FBR 16GB

Solarflare Communications CT16G4DFD824A.C16FBR 16GB

差异 规格 评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB 需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 14.3
    测试中的平均数值
Solarflare Communications CT16G4DFD824A.C16FBR 16GB 需要考虑的原因
Solarflare Communications CT16G4DFD824A.C16FBR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 54
    左右 -108% 更低的延时
  • 更快的写入速度，GB/s
    8.2 left arrow 1,308.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2Y51264TU88B0B-3C 512MB
Solarflare Communications CT16G4DFD824A.C16FBR 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 26
  • 读取速度，GB/s
    3,573.5 left arrow 14.3
  • 写入速度，GB/s
    1,308.1 left arrow 8.2
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    371 left arrow 2633

Nanya Technology M2Y51264TU88B0B-3C 512MB RAM的比较

Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB

Solarflare Communications CT16G4DFD824A.C16FBR 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston 9905700-011.A00G 8GB
Kingston 9905700-011.A00G 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
AMD R744G2400U1S-UO 4GB
AMD R744G2400U1S-UO 4GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Samsung M393A2K43BB1-CRC 16GB
Samsung M393A2K43BB1-CRC 16GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Solarflare Communications CT16G4DFD824A.C16FBR 16GB
Solarflare Communications CT16G4DFD824A.C16FBR 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Ramaxel Technology RMSA3270ME86H9F-2666 4GB
Ramaxel Technology RMSA3270ME86H9F-2666 4GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Apacer Technology 78.C1GMM.AUC0B 8GB
Apacer Technology 78.C1GMM.AUC0B 8GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
G Skill Intl F4-2800C17-8GIS 8GB
G Skill Intl F4-2800C17-8GIS 8GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F4-2400C17-4GIS 4GB
G Skill Intl F4-2400C17-4GIS 4GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Samsung M391A1G43EB1-CPB 8GB
Samsung M391A1G43EB1-CPB 8GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Samsung M471A5143EB1-CRC 4GB
Samsung M471A5143EB1-CRC 4GB
内存RAM
Kingston 9905471-074.A00LF 8GB
Kingston 9905471-074.A00LF 8GB
Kingston KHX2400C12D4/4GX 4GB
Kingston KHX2400C12D4/4GX 4GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston 9905702-002.A00G 8GB
Kingston 9905702-002.A00G 8GB
内存RAM