Nanya Technology NT1GT64U8HB0BN-3C 1GB vs Corsair CMV16GX4M1L2400C16 16GB

总分

Nanya Technology NT1GT64U8HB0BN-3C 1GB

Nanya Technology NT1GT64U8HB0BN-3C 1GB

总分

Corsair CMV16GX4M1L2400C16 16GB

Corsair CMV16GX4M1L2400C16 16GB

差异规格评论

差异

Nanya Technology NT1GT64U8HB0BN-3C 1GB

需要考虑的原因
Nanya Technology NT1GT64U8HB0BN-3C 1GB

报告一个错误

更快的读取速度，GB/s

3 15.5

测试中的平均数值

Corsair CMV16GX4M1L2400C16 16GB

需要考虑的原因
Corsair CMV16GX4M1L2400C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 67

左右 -168% 更低的延时
更快的写入速度，GB/s

7.6 1,338.6

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT1GT64U8HB0BN-3C 1GB

Corsair CMV16GX4M1L2400C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

67 25
读取速度，GB/s

3,206.2 15.5
写入速度，GB/s

1,338.6 7.6
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

447 2364

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Samsung M471B5173BH0-CK0 4GB

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Patriot Memory (PDP Systems) PSD416G32002 16GB

Samsung M393B5270CH0-CH9 4GB

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ASint Technology SLA302G08-GGNNG 4GB

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Micron Technology 8ATF51264AZ-2G1B1 4GB

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Crucial Technology BLS8G4D240FSB.16FAR 8GB