Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Corsair CMD16GX4M4B3200C14 4GB

总分

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分

Corsair CMD16GX4M4B3200C14 4GB

Corsair CMD16GX4M4B3200C14 4GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 13

测试中的平均数值

Corsair CMD16GX4M4B3200C14 4GB

需要考虑的原因
Corsair CMD16GX4M4B3200C14 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 72

左右 -157% 更低的延时
更快的写入速度，GB/s

9.2 1,938.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Corsair CMD16GX4M4B3200C14 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

72 28
读取速度，GB/s

4,241.0 13.0
写入速度，GB/s

1,938.7 9.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

677 2586

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQKD1A08 1GB

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SK Hynix HMT41GS6AFR8A-PB 8GB

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Corsair CMN32GX4M2Z3200C16 16GB

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Essencore Limited KD4AGU880-32A160U 16GB

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Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

V-GEN D4S8GL30A8TS5 8GB

V-GEN D4S8GL30A8TS5 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Samsung M471A2K43EB1-CTD 16GB

Samsung M471A2K43EB1-CTD 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Super Talent F24EB8GS 8GB

Super Talent F24EB8GS 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Corsair CMD16GX4M2B3200C14 8GB

Corsair CMD16GX4M2B3200C14 8GB