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Nanya Technology NT2GT64U8HD0BY-AD 2GB
Neo Forza NMUD416E82-3600 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Neo Forza NMUD416E82-3600 16GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分
star star star star star
Neo Forza NMUD416E82-3600 16GB

Neo Forza NMUD416E82-3600 16GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 19.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,256.8 left arrow 16.0
    测试中的平均数值
Neo Forza NMUD416E82-3600 16GB 需要考虑的原因
Neo Forza NMUD416E82-3600 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 64
    左右 -137% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Neo Forza NMUD416E82-3600 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    64 left arrow 27
  • 读取速度，GB/s
    4,651.3 left arrow 19.6
  • 写入速度，GB/s
    2,256.8 left arrow 16.0
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    837 left arrow 3909

Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较

G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB

Neo Forza NMUD416E82-3600 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M378A2G43BB3-CWE 16GB
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内存RAM
Crucial Technology CT102464BF160B.16F 8GB
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内存RAM
Kingston 99U5474-028.A00LF 4GB
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Panram International Corporation PUD42133C154G2VS 4GB
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Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3600C17-8GTRS 8GB
G Skill Intl F4-3600C17-8GTRS 8GB
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SK Hynix DDR2 800 2G 2GB
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内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
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Kingston XVTW4H-MIE 32GB
内存RAM
SK Hynix HMA81GU6DJR8N-XN 8GB
SK Hynix HMA81GU6DJR8N-XN 8GB
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Lexar Co Limited LD4AU008G-H3200GST 8GB
内存RAM
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内存RAM
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Apacer Technology 78.B1GQB.4010B 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
内存RAM
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Corsair CMD32GX4M2C3466C16W 16GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Corsair CMW64GX4M2E3200C16 32GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
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Kingston 9905701-017.A00G 16GB
内存RAM