RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
比较
Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
总分
Nanya Technology NT2GT64U8HD0BY-AD 2GB
总分
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
更快的读取速度,GB/s
4
18.7
测试中的平均数值
更快的写入速度,GB/s
2,256.8
15.9
测试中的平均数值
需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
64
左右 -121% 更低的延时
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
64
29
读取速度,GB/s
4,651.3
18.7
写入速度,GB/s
2,256.8
15.9
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
837
3594
Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较
G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Kingston HP26D4U9D8ME-16X 16GB
Kingston 9965433-034.A00LF 4GB
Wilk Elektronik S.A. GR2400S464L17S/8G 8GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-2133C15-16GIS 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
Kingston KHX1600C9D3/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
Samsung M3 78T3354BZ0-CCC 256MB
Kingston KHX4800C19D4/8GX 8GB
A-DATA Technology DDR2 800G 2GB
SK Hynix HMA42GR7MFR4N-TF 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Corsair CM4X16GF3200C22S2 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-3600C16-16GTRGC 16GB
Kingston KHX2133C11D3/4GX 4GB
Kingston 9905630-039.A00G 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Samsung M391A1G43EB1-CRC 8GB
Kingston KHX1600C9D3/4G 4GB
Essencore Limited IM4AGU88N24-FFFHMB 16GB
报告一个错误
×
Bug description
Source link