Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Kingston KF2933C17S4/16G 16GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Kingston KF2933C17S4/16G 16GB

Kingston KF2933C17S4/16G 16GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Kingston KF2933C17S4/16G 16GB

需要考虑的原因
Kingston KF2933C17S4/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 42

左右 -62% 更低的延时
更快的读取速度，GB/s

16.2 9.7

测试中的平均数值
更快的写入速度，GB/s

14.0 6.0

测试中的平均数值
更高的内存带宽，mbps

23400 10600

左右 2.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston KF2933C17S4/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 26
读取速度，GB/s

9.7 16.2
写入速度，GB/s

6.0 14.0
内存带宽，mbps

10600 23400

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-23400, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

1396 3377

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMSX4GX3M1A1600C9 4GB

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Kingston RB24D4U7S8MB-8 8GB

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G Skill Intl F4-4000C18-8GVK 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

G Skill Intl F4-2666C18-8GFX 8GB

G Skill Intl F4-2666C18-8GFX 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Gloway International (HK) STK4U2400D15082C 8GB

Gloway International (HK) STK4U2400D15082C 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston 9905701-131.A00G 16GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

G Skill Intl F4-2800C15-4GTZ 4GB

G Skill Intl F4-2800C15-4GTZ 4GB