Nanya Technology NT4GC72B4NA1NL-CG 4GB
Chun Well Technology Holding Limited D4U1636144B 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Chun Well Technology Holding Limited D4U1636144B 16GB

总分
star star star star star
Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分
star star star star star
Chun Well Technology Holding Limited D4U1636144B 16GB

Chun Well Technology Holding Limited D4U1636144B 16GB

差异

  • 低于PassMark测试中的延时,ns
    26 left arrow 42
    左右 -62% 更低的延时
  • 更快的读取速度,GB/s
    23.7 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度,GB/s
    18.3 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽,mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Chun Well Technology Holding Limited D4U1636144B 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时,ns
    42 left arrow 26
  • 读取速度,GB/s
    10.6 left arrow 23.7
  • 写入速度,GB/s
    7.8 left arrow 18.3
  • 内存带宽,mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2150 left arrow 4124
RAM Latency Calculator
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最新比较