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Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
比较
Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Crucial Technology BL16G36C16U4W.M16FE1 16GB
总分
Nanya Technology NT4GC72B4NA1NL-CG 4GB
总分
Crucial Technology BL16G36C16U4W.M16FE1 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB
报告一个错误
需要考虑的原因
Crucial Technology BL16G36C16U4W.M16FE1 16GB
报告一个错误
低于PassMark测试中的延时,ns
32
42
左右 -31% 更低的延时
更快的读取速度,GB/s
17.8
10.6
测试中的平均数值
更快的写入速度,GB/s
15.3
7.8
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
32
读取速度,GB/s
10.6
17.8
写入速度,GB/s
7.8
15.3
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2150
3593
Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM的比较
Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T3354BZ0-CCC 256MB
Gloway International (HK) STKD4GAM2133-F 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M391A1G43EB1-CPB 8GB
Kingston 9965433-406.A00LF 8GB
G Skill Intl F4-4266C17-16GVKB 16GB
Samsung M393B5170FH0-CK0 4GB
Kingston KF3600C18D4/16GX 16GB
Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMK16GX4M1A2400C16 16GB
Kingston 9905471-001.A01LF 2GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-3600C16-8GTZN 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Mushkin MR[ABC]4U266GHHF8G 8GB
Samsung M393B5170FH0-CK0 4GB
Samsung 9905599-020.A00G 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Apacer Technology GD2.1542WS.001 8GB
Kingston 99U5584-017.A00LF 4GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
Kingston 99U5474-023.A00LF 4GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
报告一个错误
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Bug description
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