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Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology BL8G24C16U4B.8FB 8GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs Crucial Technology BL8G24C16U4B.8FB 8GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
Crucial Technology BL8G24C16U4B.8FB 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
16.8
测试中的平均数值
需要考虑的原因
Crucial Technology BL8G24C16U4B.8FB 8GB
报告一个错误
低于PassMark测试中的延时,ns
31
71
左右 -129% 更低的延时
更快的写入速度,GB/s
12.5
1,322.6
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology BL8G24C16U4B.8FB 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
31
读取速度,GB/s
2,831.6
16.8
写入速度,GB/s
1,322.6
12.5
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
399
3115
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Crucial Technology BL8G24C16U4B.8FB 8GB RAM的比较
A-DATA Technology VDQVE1B16 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-2133C15-8GRK 8GB
Samsung M391B5673FH0-CH9 2GB
Kingston 9905624-044.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology CT8G4SFS8266.C8FD1 8GB
Samsung M393B1K70QB0-CK0 8GB
EVGA 16G-D4-2400-MR 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Micron Technology 8ATF51264HZ-2G1A2 4GB
Swissbit MEU25664D6BC2EP-30 2GB
Essencore Limited KD48GS88J-26N1900 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-4000C16-16GTRSA 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
A-DATA Technology DDR4 2800 2OZ 4GB
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5711-001.A00G 4GB
Samsung M393B5270CH0-CH9 4GB
Panram International Corporation PUD43000C158G2NJK 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-2133C15-16GFXR 16GB
Corsair CMX4GX3M2A1600C9 2GB
Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB
Kingston 9965516-430.A00G 16GB
G Skill Intl F4-2133C15-8GRR 8GB
Kingston 99U5471-012.A00LF 4GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
报告一个错误
×
Bug description
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