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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3600C19-16GSXKB 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs G Skill Intl F4-3600C19-16GSXKB 16GB

总分
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分
star star star star star
G Skill Intl F4-3600C19-16GSXKB 16GB

G Skill Intl F4-3600C19-16GSXKB 16GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB 需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
G Skill Intl F4-3600C19-16GSXKB 16GB 需要考虑的原因
G Skill Intl F4-3600C19-16GSXKB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 35
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3600C19-16GSXKB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 30
  • 读取速度，GB/s
    13.7 left arrow 18.2
  • 写入速度，GB/s
    9.6 left arrow 15.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2312 left arrow 3580

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较

SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB

G Skill Intl F4-3600C19-16GSXKB 16GB RAM的比较

Micron Technology 8ATF2G64HZ-2G3A1 16GB
G Skill Intl F4-4266C19-8GTRS 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3600C19-16GSXKB 16GB
G Skill Intl F4-3600C19-16GSXKB 16GB
内存RAM
G Skill Intl F4-3600C19-8GSXWB 8GB
G Skill Intl F4-3600C19-8GSXWB 8GB
Maxsun MSD416G26Q3 16GB
Maxsun MSD416G26Q3 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Avant Technology J644GU44J2320NQ 32GB
Avant Technology J644GU44J2320NQ 32GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
V-Color Technology Inc. TA48G30S815GK 8GB
V-Color Technology Inc. TA48G30S815GK 8GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Corsair CM4X16GE2400C16K4 16GB
Corsair CM4X16GE2400C16K4 16GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Kingston 9905624-022.A00G 8GB
Kingston 9905624-022.A00G 8GB
内存RAM
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
Corsair CMV16GX4M1L2400C16 16GB
Corsair CMV16GX4M1L2400C16 16GB
内存RAM
Smart Modular SH564128FH8N0QHSCG 4GB
Smart Modular SH564128FH8N0QHSCG 4GB
Kingston 9905624-008.A00G 8GB
Kingston 9905624-008.A00G 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Kingston M378A1K43CB2-CRC 8GB
Kingston M378A1K43CB2-CRC 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Teikon TMA851U6AFR6N-UHHC 4GB
Teikon TMA851U6AFR6N-UHHC 4GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Kingston 9965589-026.D00G 8GB
Kingston 9965589-026.D00G 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Corsair CMT32GX4M2D3600C18 16GB
Corsair CMT32GX4M2D3600C18 16GB
内存RAM
Kingston HP669238-071-HYC 4GB
Kingston HP669238-071-HYC 4GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
内存RAM