Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Micron Technology 16ATF1G64AZ-2G1A1 8GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Micron Technology 16ATF1G64AZ-2G1A1 8GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 42

左右 17% 更低的延时
更快的读取速度，GB/s

13.7 12.7

测试中的平均数值

Micron Technology 16ATF1G64AZ-2G1A1 8GB

需要考虑的原因
Micron Technology 16ATF1G64AZ-2G1A1 8GB

报告一个错误

更快的写入速度，GB/s

10.2 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 42
读取速度，GB/s

13.7 12.7
写入速度，GB/s

9.6 10.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2312 2701

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Crucial Technology CT8G4DFS8266.C8FD1 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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V-Color Technology Inc. TL48G30S8KGRGB15 8GB

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AMD R5316G1609U2K 8GB

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Kingston 6400DT Series 2GB

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Crucial Technology BL16G36C16U4R.M16FE1 16GB

Crucial Technology BL16G36C16U4R.M16FE1 16GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

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Apacer Technology GD2.1527WT.001 8GB

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G Skill Intl F4-3600C18-8GVK 8GB