Patriot Memory (PDP Systems) PSD21G800816 1GB vs Corsair CMK16GX4M4C3200C15 4GB

总分

Patriot Memory (PDP Systems) PSD21G800816 1GB

Patriot Memory (PDP Systems) PSD21G800816 1GB

总分

Corsair CMK16GX4M4C3200C15 4GB

Corsair CMK16GX4M4C3200C15 4GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD21G800816 1GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD21G800816 1GB

报告一个错误

更快的读取速度，GB/s

3 15.2

测试中的平均数值

Corsair CMK16GX4M4C3200C15 4GB

需要考虑的原因
Corsair CMK16GX4M4C3200C15 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 66

左右 -175% 更低的延时
更快的写入速度，GB/s

11.5 1,637.0

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD21G800816 1GB

Corsair CMK16GX4M4C3200C15 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 24
读取速度，GB/s

3,853.2 15.2
写入速度，GB/s

1,637.0 11.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

572 2917

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5773DH0-CH9 2GB

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Corsair CMD8GX3M2A2933C12 4GB

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Crucial Technology CT4G4DFS824A.M8FE 4GB

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Kingston 9905624-051.A00G 8GB

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SK Hynix HMT351S6CFR8C-PB 4GB

Samsung M474A2K43BB1-CRC 16GB

Samsung M474A2K43BB1-CRC 16GB