Patriot Memory (PDP Systems) PSD34G133381 4GB

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

Patriot Memory (PDP Systems) PSD34G133381 4GB vs Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

总分

Patriot Memory (PDP Systems) PSD34G133381 4GB

Patriot Memory (PDP Systems) PSD34G133381 4GB

总分

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD34G133381 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD34G133381 4GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 27

左右 -13% 更低的延时
更快的读取速度，GB/s

15.5 12.7

测试中的平均数值
更快的写入速度，GB/s

8.8 7.3

测试中的平均数值

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD34G133381 4GB

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

27 24
读取速度，GB/s

12.7 15.5
写入速度，GB/s

7.3 8.8
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2121 2444

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Patriot Memory (PDP Systems) PSD34G133381 4GB

Patriot Memory (PDP Systems) PSD34G133381 4GB

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338C

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston 9905471-081.A00LF 8GB

Kingston 9905471-081.A00LF 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Apacer Technology 78.DAGQ7.40B0B 16GB

Apacer Technology 78.DAGQ7.40B0B 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston 9905624-016.A00G 8GB

Kingston 9905624-016.A00G 8GB

Kingston KHX3200C20S4/16G 16GB

Kingston KHX3200C20S4/16G 16GB

Kingston KHX3200C16D4/8GX 8GB

Kingston KHX3200C16D4/8GX 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Kingston 9905643-009.A00G 8GB

Kingston 9905643-009.A00G 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393A2K43DB3-CWE 16GB

Samsung M393A2K43DB3-CWE 16GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Mushkin MR[ABC]4U320GJJM16G 16GB

Mushkin MR[ABC]4U320GJJM16G 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

SK Hynix HMA82GR7MFR4N-UH 16GB

SK Hynix HMA82GR7MFR4N-UH 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

A-DATA Technology AO1P24HC4N2-BWCS 4GB

A-DATA Technology AO1P24HC4N2-BWCS 4GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F4-3600C18-8GTZRX 8GB

G Skill Intl F4-3600C18-8GTZRX 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-3600C19-8GSXK 8GB

G Skill Intl F4-3600C19-8GSXK 8GB

Mushkin 991586 2GB

Mushkin 991586 2GB

G Skill Intl F4-2400C16-4GFX 4GB

G Skill Intl F4-2400C16-4GFX 4GB