Patriot Memory (PDP Systems) PSD34G16002 4GB vs Samsung M393A1G40EB1-CRC 8GB

总分

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

总分

Samsung M393A1G40EB1-CRC 8GB

Samsung M393A1G40EB1-CRC 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD34G16002 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD34G16002 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 52

左右 25% 更低的延时
更快的读取速度，GB/s

14.7 10.5

测试中的平均数值
更快的写入速度，GB/s

9.2 7.7

测试中的平均数值

Samsung M393A1G40EB1-CRC 8GB

需要考虑的原因
Samsung M393A1G40EB1-CRC 8GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD34G16002 4GB

Samsung M393A1G40EB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 52
读取速度，GB/s

14.7 10.5
写入速度，GB/s

9.2 7.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2322 2236

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Chun Well Technology Holding Limited ND4U1636181DRLDE 1

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Crucial Technology CT51264BD1339.M16F 4GB

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Kingston XF875V-MIH 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

Corsair CMK8GX4M2A2400C14 4GB

Corsair CMK8GX4M2A2400C14 4GB

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A-DATA Technology AD73I1C1674EV 4GB

Smart Modular SMS4TDC8C1K0446FCG 8GB

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Kingston 9965525-144.A00LF 8GB

Corsair CMSX32GX4M2A3000C16 16GB

Corsair CMSX32GX4M2A3000C16 16GB