Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

总分

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 56

左右 27% 更低的延时

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

报告一个错误

更快的读取速度，GB/s

20.1 14

测试中的平均数值
更快的写入速度，GB/s

10.5 9.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 56
读取速度，GB/s

14.0 20.1
写入速度，GB/s

9.2 10.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2356 2455

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Team Group Inc. TEAMGROUP-UD4-3866 8GB

Team Group Inc. TEAMGROUP-UD4-3866 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M378A1K43BB1-CRC 8GB

Samsung M378A1K43BB1-CRC 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Samsung M471A5244BB0-CRC 4GB

Samsung M471A5244BB0-CRC 4GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Teikon TMA41GU6AFR8N-TFSC 8GB

Teikon TMA41GU6AFR8N-TFSC 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-4000C17-16GTRGB 16GB

G Skill Intl F4-4000C17-16GTRGB 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F4-3200C15-16GTZ 16GB

G Skill Intl F4-3200C15-16GTZ 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

UMAX Technology D4-2133-4GB-512X8-L 4GB

UMAX Technology D4-2133-4GB-512X8-L 4GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

Crucial Technology CT16G4SFD824A.M16FJ 16GB

Crucial Technology CT16G4SFD824A.M16FJ 16GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB