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PNY Electronics PNY 2GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

PNY Electronics PNY 2GB vs Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB 需要考虑的原因
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB
报告一个错误
  • 更快的读取速度，GB/s
    14.4 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.2 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 27
  • 读取速度，GB/s
    13.8 left arrow 14.4
  • 写入速度，GB/s
    8.4 left arrow 9.2
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 2575

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB RAM的比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston 9965516-049.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Crucial Technology BLE4G4D30AEEA.K8FE 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
内存RAM
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
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内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
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内存RAM
Kingston 99U5474-037.A00LF 4GB
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内存RAM
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内存RAM
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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内存RAM
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内存RAM
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G Skill Intl F3-10600CL9-2GBNT 2GB
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内存RAM
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Nanya Technology NT4GC72B4NA1NL-CG 4GB
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内存RAM
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内存RAM
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Apacer Technology 78.CAGN7.4000C 8GB
内存RAM