PNY Electronics PNY 2GB vs Kingston KHX2133C13S4/4G 4GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Kingston KHX2133C13S4/4G 4GB

Kingston KHX2133C13S4/4G 4GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

Kingston KHX2133C13S4/4G 4GB

需要考虑的原因
Kingston KHX2133C13S4/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 -8% 更低的延时
更快的读取速度，GB/s

14.8 13.8

测试中的平均数值
更快的写入速度，GB/s

11.2 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Kingston KHX2133C13S4/4G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 25
读取速度，GB/s

13.8 14.8
写入速度，GB/s

8.4 11.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 2346

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFS8213.C8FDD1 8GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

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Crucial Technology CT16G4SFD824A.C16FJ 16GB

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Kingston 99U5700-027.A00G 8GB

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Samsung M471A1K43EB1-CWE 8GB

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Samsung M471A1G43EB1-CRC 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

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G Skill Intl F4-3000C14-16GVRD 16GB

G Skill Intl F4-3000C14-16GVRD 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Corsair CMD16GX4M2B2800C14 8GB

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Samsung M471B5673FH0-CF8 2GB

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Crucial Technology CT102464BF160B-16F 8GB

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Maxsun MSD48G32Q3 8GB

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Kingston ACR256X64D3S1333C9 2GB

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Crucial Technology BLS16G4D32AESB.M16FE 16GB

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Kingston HP698651-154-MCN 8GB

Apacer Technology 78.C1GMW.AUC0B 8GB

Apacer Technology 78.C1GMW.AUC0B 8GB