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PNY Electronics PNY 2GB
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
比较
PNY Electronics PNY 2GB vs Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
总分
PNY Electronics PNY 2GB
总分
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
差异
规格
评论
差异
需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
47
左右 43% 更低的延时
需要考虑的原因
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
报告一个错误
更快的读取速度,GB/s
14.8
13.8
测试中的平均数值
更快的写入速度,GB/s
11.6
8.4
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
PNY Electronics PNY 2GB
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
47
读取速度,GB/s
13.8
14.8
写入速度,GB/s
8.4
11.6
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2274
2875
PNY Electronics PNY 2GB RAM的比较
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
PNY Electronics PNY 2GB
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Corsair CMD16GX4M4B3000C15 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology CT4G4DFS8266.M8FG 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Transcend Information TS2GSH64V6B 16GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
Golden Empire CL5-5-5DDR2 1GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB
Samsung M393B1G70QH0-YK0 8GB
Corsair CMK32GX4M4B3200C16 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology CT4G4DFS8266.M8FF 4GB
SK Hynix HYMP112U64CP8-S6 1GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M393B1K70QB0-CK0 8GB
Kingston LV36D4U1S8HD-8XR 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-4800C19-8GTZRC 8GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-2800C15-8GVR 8GB
报告一个错误
×
Bug description
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