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PUSKILL DDR3 1600 8G 8GB
Micron Technology M471A1K43BB1-CRC 8GB

PUSKILL DDR3 1600 8G 8GB vs Micron Technology M471A1K43BB1-CRC 8GB

总分
star star star star star
PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分
star star star star star
Micron Technology M471A1K43BB1-CRC 8GB

Micron Technology M471A1K43BB1-CRC 8GB

差异 规格 评论

差异

PUSKILL DDR3 1600 8G 8GB 需要考虑的原因
PUSKILL DDR3 1600 8G 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.7 left arrow 16
    测试中的平均数值
Micron Technology M471A1K43BB1-CRC 8GB 需要考虑的原因
Micron Technology M471A1K43BB1-CRC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 38
    左右 -31% 更低的延时
  • 更快的写入速度，GB/s
    12.1 left arrow 10.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
PUSKILL DDR3 1600 8G 8GB
Micron Technology M471A1K43BB1-CRC 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 29
  • 读取速度，GB/s
    16.7 left arrow 16.0
  • 写入速度，GB/s
    10.0 left arrow 12.1
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2753 left arrow 2635

PUSKILL DDR3 1600 8G 8GB RAM的比较

A-DATA Technology DDR3 1866 8GB
Crucial Technology CT16G4DFD8266.M16FE 16GB

Micron Technology M471A1K43BB1-CRC 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B1K70QB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Crucial Technology BL8G36C16U4R.M8FE1 8GB
Crucial Technology BL8G36C16U4R.M8FE1 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Panram International Corporation PUD42400C154G4NJK 4GB
Panram International Corporation PUD42400C154G4NJK 4GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-3200C16-16GTZA 16GB
G Skill Intl F4-3200C16-16GTZA 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology CT8G4SFS824A.C8FBR1 8GB
Crucial Technology CT8G4SFS824A.C8FBR1 8GB
内存RAM
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
G Skill Intl F4-3600C17-8GTZ 8GB
G Skill Intl F4-3600C17-8GTZ 8GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
Corsair CMD32GX4M2B3466C16 16GB
Corsair CMD32GX4M2B3466C16 16GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-2800C15-8GVRB 8GB
G Skill Intl F4-2800C15-8GVRB 8GB
内存RAM
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F4-3200C14-8GFX 8GB
G Skill Intl F4-3200C14-8GFX 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
内存RAM
Kingston ACR512X64D3S16C11G 4GB
Kingston ACR512X64D3S16C11G 4GB
Corsair CM4B8G1L2666A18S4 8GB
Corsair CM4B8G1L2666A18S4 8GB
内存RAM
Team Group Inc. ZEUS-2133 8GB
Team Group Inc. ZEUS-2133 8GB
Kingston KHX2400C15S4/4G 4GB
Kingston KHX2400C15S4/4G 4GB
内存RAM
Super Talent STT-WB160CL0901 2GB
Super Talent STT-WB160CL0901 2GB
G Skill Intl F4-3600C19-8GVSB 8GB
G Skill Intl F4-3600C19-8GVSB 8GB
内存RAM