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PUSKILL PJ16TFK1GM8 16GB
Kingston KF3200C20S4/16G 16GB

PUSKILL PJ16TFK1GM8 16GB vs Kingston KF3200C20S4/16G 16GB

总分
star star star star star
PUSKILL PJ16TFK1GM8 16GB

PUSKILL PJ16TFK1GM8 16GB

总分
star star star star star
Kingston KF3200C20S4/16G 16GB

Kingston KF3200C20S4/16G 16GB

差异 规格 评论

差异

PUSKILL PJ16TFK1GM8 16GB 需要考虑的原因
PUSKILL PJ16TFK1GM8 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 48
    左右 15% 更低的延时
Kingston KF3200C20S4/16G 16GB 需要考虑的原因
Kingston KF3200C20S4/16G 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.8 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.6 left arrow 10.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33 更高的带宽

规格

完整的技术规格清单
PUSKILL PJ16TFK1GM8 16GB
Kingston KF3200C20S4/16G 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 48
  • 读取速度，GB/s
    12.7 left arrow 16.8
  • 写入速度，GB/s
    10.7 left arrow 13.6
  • 内存带宽，mbps
    19200 left arrow 25600
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 left arrow PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2621 left arrow 2895

PUSKILL PJ16TFK1GM8 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston KF3200C20S4/16G 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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Kingston KHX1600C9S3L/4G 4GB
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G Skill Intl F4-3600C16-8GVKC 8GB
内存RAM
PUSKILL PJ16TFK1GM8 16GB
PUSKILL PJ16TFK1GM8 16GB
Kingston KF3200C20S4/16G 16GB
Kingston KF3200C20S4/16G 16GB
内存RAM
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内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
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内存RAM
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内存RAM
Samsung M378B5773DH0-CH9 2GB
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Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
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SK Hynix HMA81GS6AFR8N-UH 8GB
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Patriot Memory (PDP Systems) 2400 C17 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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Corsair CMT64GX4M8X3600C18 8GB
内存RAM
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Kingston ACR32D4U2S8HD-8X 8GB
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Crucial Technology BL16G36C16U4WL.M16FE 16GB
内存RAM
Strontium EVMT8G1600U86S 8GB
Strontium EVMT8G1600U86S 8GB
Samsung M471A4G43BB1-CWE 32GB
Samsung M471A4G43BB1-CWE 32GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
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Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
内存RAM
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Samsung M378B5673EH1-CF8 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
内存RAM
Transcend Information TS512MSK64W6H 4GB
Transcend Information TS512MSK64W6H 4GB
Apacer Technology 78.CAGN7.4000C 8GB
Apacer Technology 78.CAGN7.4000C 8GB
内存RAM