Ramaxel Technology RMR5040ED58E9W1600 4GB vs Crucial Technology BLT16G4D30BET4.C16FD 16GB

总分

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

总分

Crucial Technology BLT16G4D30BET4.C16FD 16GB

Crucial Technology BLT16G4D30BET4.C16FD 16GB

差异规格评论

差异

Ramaxel Technology RMR5040ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMR5040ED58E9W1600 4GB

报告一个错误

Crucial Technology BLT16G4D30BET4.C16FD 16GB

需要考虑的原因
Crucial Technology BLT16G4D30BET4.C16FD 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 43

左右 -39% 更低的延时
更快的读取速度，GB/s

16.8 13.2

测试中的平均数值
更快的写入速度，GB/s

13.8 9.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMR5040ED58E9W1600 4GB

Crucial Technology BLT16G4D30BET4.C16FD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 31
读取速度，GB/s

13.2 16.8
写入速度，GB/s

9.3 13.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2285 3405

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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MDT Technologies GmbH MDT 512M DDR2-66 512MB

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G Skill Intl F4-2400C15-4GIS 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

V-Color Technology Inc. TL48G32S8KGRGB16 8GB

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Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

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Samsung M393B5170FH0-CK0 4GB

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Corsair CMK32GX4M4K4333C19 8GB