Ramaxel Technology RMT3010EC58E8F1333 2GB vs Crucial Technology BL16G36C16U4WL.M16FE 16GB

总分

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

总分

Crucial Technology BL16G36C16U4WL.M16FE 16GB

Crucial Technology BL16G36C16U4WL.M16FE 16GB

差异规格评论

差异

Ramaxel Technology RMT3010EC58E8F1333 2GB

需要考虑的原因
Ramaxel Technology RMT3010EC58E8F1333 2GB

报告一个错误

Crucial Technology BL16G36C16U4WL.M16FE 16GB

需要考虑的原因
Crucial Technology BL16G36C16U4WL.M16FE 16GB

报告一个错误

更快的读取速度，GB/s

19.8 13.5

测试中的平均数值
更快的写入速度，GB/s

16.8 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3010EC58E8F1333 2GB

Crucial Technology BL16G36C16U4WL.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 26
读取速度，GB/s

13.5 19.8
写入速度，GB/s

7.8 16.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1932 4012

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Crucial Technology CT8G4DFRA266.C4FE 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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InnoDisk Corporation M4S0-4GSSNCIK 4GB

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Samsung M471B5273EB0-CK0 4GB

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Crucial Technology BL16G32C16U4W.M8FB1 16GB

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Crucial Technology CT8G4SFRA32A.C4FE 8GB

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SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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A-DATA Technology AD73I1C1674EV 4GB

Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Apacer Technology D12.2344DT.001 4GB

Apacer Technology D12.2344DT.001 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

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Crucial Technology CT8G4SFS824A.M8FB 8GB

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A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Crucial Technology CT8G4SFS824A.C8FDR1 8GB

Crucial Technology CT8G4SFS824A.C8FDR1 8GB