Ramaxel Technology RMT3160ED58E9W1600 4GB vs Inmos + 256MB

总分

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

总分

Inmos + 256MB

Inmos + 256MB

差异规格评论

差异

Ramaxel Technology RMT3160ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMT3160ED58E9W1600 4GB

报告一个错误

更快的读取速度，GB/s

12.3 11.5

测试中的平均数值

Inmos + 256MB

需要考虑的原因
Inmos + 256MB

报告一个错误

低于PassMark测试中的延时，ns

30 40

左右 -33% 更低的延时
更快的写入速度，GB/s

9.1 7.8

测试中的平均数值
更高的内存带宽，mbps

16800 12800

左右 1.31 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3160ED58E9W1600 4GB

Inmos + 256MB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 30
读取速度，GB/s

12.3 11.5
写入速度，GB/s

7.8 9.1
内存带宽，mbps

12800 16800

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz no data
排名PassMark (越多越好)

1806 2318

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.D2GF2.4010B 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Kingston KHX1600C9D3/8G 8GB

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G Skill Intl F4-3200C16-8GTZN 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

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Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB

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Samsung M474A1G43EB1-CRC 8GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

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G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F3-14900CL9-4GBSR 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N

Samsung M393B2G70BH0-YK0 16GB

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Corsair CMD16GX4M4B3000C14 4GB

Corsair CMD16GX4M4B3000C14 4GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

G Skill Intl F4-3200C16-32GTZN 32GB

G Skill Intl F4-3200C16-32GTZN 32GB