Ramos Technology RMB4GB58BCA3-13HC 4GB vs A-DATA Technology DDR4 3333 2OZ 4GB

总分

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

总分

A-DATA Technology DDR4 3333 2OZ 4GB

A-DATA Technology DDR4 3333 2OZ 4GB

差异规格评论

差异

Ramos Technology RMB4GB58BCA3-13HC 4GB

需要考虑的原因
Ramos Technology RMB4GB58BCA3-13HC 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 24

左右 4% 更低的延时

A-DATA Technology DDR4 3333 2OZ 4GB

需要考虑的原因
A-DATA Technology DDR4 3333 2OZ 4GB

报告一个错误

更快的读取速度，GB/s

15.7 11.6

测试中的平均数值
更快的写入速度，GB/s

12.3 5.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Ramos Technology RMB4GB58BCA3-13HC 4GB

A-DATA Technology DDR4 3333 2OZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 24
读取速度，GB/s

11.6 15.7
写入速度，GB/s

5.6 12.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1751 2517

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Maxsun MSD48G30M3 8GB

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Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KHX3200C20S4/16GX 16GB

Kingston KHX3200C20S4/16GX 16GB