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Samsung M3 78T2863EHS-CF7 1GB
SK Hynix HMA41GR7MFR4N-TF 8GB

Samsung M3 78T2863EHS-CF7 1GB vs SK Hynix HMA41GR7MFR4N-TF 8GB

总分
star star star star star
Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分
star star star star star
SK Hynix HMA41GR7MFR4N-TF 8GB

SK Hynix HMA41GR7MFR4N-TF 8GB

差异 规格 评论

差异

Samsung M3 78T2863EHS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 10.1
    测试中的平均数值
SK Hynix HMA41GR7MFR4N-TF 8GB 需要考虑的原因
SK Hynix HMA41GR7MFR4N-TF 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    52 left arrow 59
    左右 -13% 更低的延时
  • 更快的写入速度，GB/s
    7.5 left arrow 2,123.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863EHS-CF7 1GB
SK Hynix HMA41GR7MFR4N-TF 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 52
  • 读取速度，GB/s
    4,833.8 left arrow 10.1
  • 写入速度，GB/s
    2,123.3 left arrow 7.5
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    731 left arrow 2176

Samsung M3 78T2863EHS-CF7 1GB RAM的比较

Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

SK Hynix HMA41GR7MFR4N-TF 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
SK Hynix HMA41GR7MFR4N-TF 8GB
SK Hynix HMA41GR7MFR4N-TF 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-2400C15Z8GNT 8GB
G Skill Intl F4-2400C15Z8GNT 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
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Corsair CM4X8GD3200C16K2E 8GB
Corsair CM4X8GD3200C16K2E 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Team Group Inc. TEAMGROUP-SD4-2400 16GB
Team Group Inc. TEAMGROUP-SD4-2400 16GB
内存RAM
Samsung M378B1G73QH0-CK0 8GB
Samsung M378B1G73QH0-CK0 8GB
Crucial Technology BLM8G40C18U4B.M8FE1 8GB
Crucial Technology BLM8G40C18U4B.M8FE1 8GB
内存RAM
Nanya Technology NT2GC64B88B0NS-CG 2GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
Nanya Technology NT4GC64B8HB0NS-CG 4GB
Nanya Technology NT4GC64B8HB0NS-CG 4GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Micron Technology 16ATF1G64AZ-2G1A1 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
G Skill Intl F4-3000C15-4GRK 4GB
G Skill Intl F4-3000C15-4GRK 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
SK Hynix HMAA4GU6AJR8N-VK 32GB
SK Hynix HMAA4GU6AJR8N-VK 32GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
V-GEN D4H8GL32A8TS 8GB
V-GEN D4H8GL32A8TS 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-2933C16-16GFX 16GB
G Skill Intl F4-2933C16-16GFX 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
Corsair CMK16GX4M2L3000C15 8GB
Corsair CMK16GX4M2L3000C15 8GB
内存RAM