Samsung M3 78T2863QZS-CF7 1GB vs NSITEXE Inc Visenta 16GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

NSITEXE Inc Visenta 16GB

NSITEXE Inc Visenta 16GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 18

测试中的平均数值

NSITEXE Inc Visenta 16GB

需要考虑的原因
NSITEXE Inc Visenta 16GB

报告一个错误

低于PassMark测试中的延时，ns

58 69

左右 -19% 更低的延时
更快的写入速度，GB/s

8.2 1,857.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

NSITEXE Inc Visenta 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 58
读取速度，GB/s

4,217.2 18.0
写入速度，GB/s

1,857.7 8.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

668 2025

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Kingston X74R9W-MIE 8GB

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Kingston KMKYF9-MIB 8GB

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Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB

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Crucial Technology CT8G4DFS8213.M8FA 8GB

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Corsair CMZ16GX3M2A1866C9 8GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200