Samsung M3 78T2953EZ3-CF7 1GB vs Crucial Technology BL8G32C16U4R.M8FE 8GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

Crucial Technology BL8G32C16U4R.M8FE 8GB

Crucial Technology BL8G32C16U4R.M8FE 8GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 20.5

测试中的平均数值

Crucial Technology BL8G32C16U4R.M8FE 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4R.M8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 58

左右 -100% 更低的延时
更快的写入速度，GB/s

15.9 1,950.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

Crucial Technology BL8G32C16U4R.M8FE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 29
读取速度，GB/s

4,241.0 20.5
写入速度，GB/s

1,950.7 15.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

651 3587

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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SK Hynix HMA81GS6CJRJR-VK 8GB

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Corsair CMK64GX4M82800C14 8GB

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AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

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Kingston KHX2400C14/16G 16GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

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