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Samsung M3 78T2953EZ3-CF7 1GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB

Samsung M3 78T2953EZ3-CF7 1GB vs Micron Technology 36ASF4G72PZ-2G6D1 32GB

总分
star star star star star
Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分
star star star star star
Micron Technology 36ASF4G72PZ-2G6D1 32GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB

差异 规格 评论

差异

Samsung M3 78T2953EZ3-CF7 1GB 需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 11.7
    测试中的平均数值
Micron Technology 36ASF4G72PZ-2G6D1 32GB 需要考虑的原因
Micron Technology 36ASF4G72PZ-2G6D1 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    48 left arrow 58
    左右 -21% 更低的延时
  • 更快的写入速度，GB/s
    10.7 left arrow 1,950.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2953EZ3-CF7 1GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 48
  • 读取速度，GB/s
    4,241.0 left arrow 11.7
  • 写入速度，GB/s
    1,950.7 left arrow 10.7
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    651 left arrow 2568

Samsung M3 78T2953EZ3-CF7 1GB RAM的比较

Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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PNY Electronics 4GBH2X02E99927-16 4GB
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内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM
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Essencore Limited KD4AGS88A-26N1600 16GB
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DSL Memory CIR-W4SUSS2408G 8GB
内存RAM
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Samsung M393B1K70CH0-CH9 8GB
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内存RAM
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King Tiger Technology TMKG8G3000C17(XMP) 8GB
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