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Samsung M3 78T3354BZ0-CCC 256MB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
比较
Samsung M3 78T3354BZ0-CCC 256MB vs A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
总分
Samsung M3 78T3354BZ0-CCC 256MB
总分
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
更快的读取速度,GB/s
2
15
测试中的平均数值
需要考虑的原因
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
46
左右 -64% 更低的延时
更快的写入速度,GB/s
9.5
1,519.2
测试中的平均数值
更高的内存带宽,mbps
25600
3200
左右 8 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
28
读取速度,GB/s
2,909.8
15.0
写入速度,GB/s
1,519.2
9.5
内存带宽,mbps
3200
25600
Other
描述
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
时序/时钟速度
3-3-3-12 / 400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
241
2932
Samsung M3 78T3354BZ0-CCC 256MB RAM的比较
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3200C16-4GRKD 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3333C16-8GTZ 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Patriot Memory (PDP Systems) PSD48G240082 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT8G4SFS8266.C8FE 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Team Group Inc. TEAMGROUP-SD4-2666 16GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Kllisre 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471A2K43EB1-CTD 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M378A5244CB0-CTD 4GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-2400C17-16GIS 16GB
Crucial Technology BLT4G3D1337DT1TX0. 4GB
G Skill Intl F4-4800C18-8GTRS 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
Samsung M378B5673EH1-CF8 2GB
Apacer Technology 78.C1GQB.4032B 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-2400C17-4GVR 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT32G4SFD8266.C16FE 32GB
报告一个错误
×
Bug description
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