Samsung M3 78T3354BZ0-CCC 256MB vs Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 17.4

测试中的平均数值

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 46

左右 -109% 更低的延时
更快的写入速度，GB/s

13.0 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 22
读取速度，GB/s

2,909.8 17.4
写入速度，GB/s

1,519.2 13.0
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 3162

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Smart Modular SH564128FH8NZQNSCG 4GB

A-DATA Technology DDR4 3333 2OZ 4GB

A-DATA Technology DDR4 3333 2OZ 4GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

SK Hynix HMA84GR7AFR4N-VK 32GB

SK Hynix HMA84GR7AFR4N-VK 32GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-3000C16-8GRS 8GB

G Skill Intl F4-3000C16-8GRS 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Mushkin 99[2/7/4]204[F/T] 4GB

Mushkin 99[2/7/4]204[F/T] 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingston MSI24D4U7S8MB-8 8GB

Kingston MSI24D4U7S8MB-8 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Corsair CMD16GX4M4C3200C16 4GB

Corsair CMD16GX4M4C3200C16 4GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-3600C14-8GTRSB 8GB

G Skill Intl F4-3600C14-8GTRSB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

A-DATA Technology DDR4 3333 2OZ 4GB

A-DATA Technology DDR4 3333 2OZ 4GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology BL16G32C16U4R.M16FE 16GB

Crucial Technology BL16G32C16U4R.M16FE 16GB

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43CB1-CRC 16GB

Samsung M471A2K43CB1-CRC 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Mushkin 99[2/7/4]190F 4GB

Mushkin 99[2/7/4]190F 4GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Hewlett-Packard 7EH67AA# 8GB

Hewlett-Packard 7EH67AA# 8GB