Samsung M3 78T3354BZ0-CCC 256MB vs GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 17.4

测试中的平均数值

GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

需要考虑的原因
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 46

左右 -28% 更低的延时
更快的写入速度，GB/s

12.8 1,519.2

测试中的平均数值
更高的内存带宽，mbps

21300 3200

左右 6.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 36
读取速度，GB/s

2,909.8 17.4
写入速度，GB/s

1,519.2 12.8
内存带宽，mbps

3200 21300

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

3-3-3-12 / 400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

241 3074

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston ACR16D3LS1NGG/2G 2GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

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Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMU64GX4M4C3200C16 16GB

Corsair CMU64GX4M4C3200C16 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology BL8G32C16U4W.M8FE 8GB

Crucial Technology BL8G32C16U4W.M8FE 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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