Samsung M3 78T5663EH3-CF7 2GB vs Corsair CMK32GX4M2A2133C13 16GB

总分

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

总分

Corsair CMK32GX4M2A2133C13 16GB

Corsair CMK32GX4M2A2133C13 16GB

差异规格评论

差异

Samsung M3 78T5663EH3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 15.5

测试中的平均数值
更快的写入速度，GB/s

2,451.8 11.0

测试中的平均数值

Corsair CMK32GX4M2A2133C13 16GB

需要考虑的原因
Corsair CMK32GX4M2A2133C13 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 65

左右 -81% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663EH3-CF7 2GB

Corsair CMK32GX4M2A2133C13 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 36
读取速度，GB/s

4,605.9 15.5
写入速度，GB/s

2,451.8 11.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

878 2937

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Kingston 9905584-016.A00LF 4GB

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Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

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Kingston 9905624-023.A00G 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Kingston ACR26D4S9S1ME-4 4GB

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Kingston KVR533D2N4 512MB

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SK Hynix HMA851U6AFR6N-UH 4GB

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Kingston 9905584-016.A00LF 4GB

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Kingston 9905700-011.A00G 8GB

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Kingston LV32D4U2S8HD-8X 8GB

Kingston LV32D4U2S8HD-8X 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Corsair CMD16GX4M4B3000C14 4GB

Corsair CMD16GX4M4B3000C14 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Gloway International (HK) STK2400CL17SNB16GB 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Super Talent F24EB8GS 8GB

Super Talent F24EB8GS 8GB